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簡(jiǎn)要描述:Model520C工業(yè)半導(dǎo)體測(cè)試儀
技術(shù)參數(shù):
| 520C | 510A |
IN-CIRCUIT TEST | ||
GOOD/BAD TEST | PNP and NPN transistors FET’s, SCR’s | |
IDENTIFIES | NPN or PNP FET as N-channel or P-channel Silicone or germanium transistors transistors in LO drive, base lead in HI drive all leads of SCR | NPN or PNP FET as N-channel or P-channel FET-gate lead, all leads of |
OUT-OF-CIRCUIT TEST | ||
GOOD/BAD TEST | PNP and NPN transistors FET’s, SCR’s | PNP and NPN transistors FET’s |
IDENTIFIES | NPN or PNP FET as N-channel or P-channel Silicone or germanium transistors | NPN or PNP FET as N-channel or P-channel |
MEASURES | Reverse leakage from 0.1mA to 9mA | Does not apply |
AUTOMATIC INDICATORS | ||
AUDIBLE TONE | GOOD | Does not apply |
LED | NPN or PNP, Ge or Si | NPN or PNP, Ge or Si |
TEST SWITCH | Base or Gate for good transist or FET’s | Base or Gate for good transistor or FET’s |
METER SCALES | Readable from 0.1μA to 9mA for Ice leakage, calibrated for silicon and germanium power and signal transistor leakage limits | Does not apply |
APPLIED TEST CURRENTS | ||
BASE DRIVE* | 250mA (HI), 1mA (LO) | |
COLLECTOR* | 125mA | |
TEST REPETITION | 10Hz | 5Hz |
IN-CIRCUIT SHUNT LIMIT FOR VALID GOOD/BAD TEST | ||
RESISTANCE | >10Ω (HI), 1.5kΩ (LO) | |
CAPACITANCE | <15mF (HI), 0.3mF (LO) | <25mF (HI), 0.3μF (LO) |
GENERAL | ||
POWER REQUIREMENT | 9V Battery (Supplied) or optional AC adaptor | 6VDC from 4 “AA” batteries(not supplied) |
OPERATING TEMP | 32° to 104°F (0° to 40°C), <75% RH | |
DIMENSIONS(HxD) | 7.5 x 4.0 x 2.0"(191 x 102 x 51 mm) | |
WEIGHT | 1 lb. (450g) |